VSD026N04MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 40V/30A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 40 V 19 mΩ 22 mΩ 30 A TO-252 Part ID VSD026N04MS Package Type TO-252 Marking 026N04M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C...