VSI160N10MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 100 V 150 mΩ 165 mΩ 8A TO-251-S Part ID VSI160N10MS Package Type TO-251-S Marking 160N10 Tape and reel information 80pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source...