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VSO025C03MC - N+P-Channel Advanced Power MOSFET

Key Features

  • N+P Channel.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=±4.5 V.
  • Fast Switching.
  • Pb-free lead plating; RoHS compliant VSO025C03MC 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 15 23 mΩ 23 38 mΩ 10 -8 A SOP8 Part ID VSO025C03MC Package Type SOP8 Marking 025C03MC Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS Unit V.

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Datasheet Details

Part number VSO025C03MC
Manufacturer Vanguard Semiconductor
File Size 681.37 KB
Description N+P-Channel Advanced Power MOSFET
Datasheet download datasheet VSO025C03MC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N+P Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=±4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO025C03MC 30V N+P Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=±10 V R @DS(on),TYP VGS=±4.5V ID 30 -30 V 15 23 mΩ 23 38 mΩ 10 -8 A SOP8 Part ID VSO025C03MC Package Type SOP8 Marking 025C03MC Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating NMOS PMOS Unit V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=±10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TA =25°C TA =25°C TA =100°C TA =25°C 30 1.6 10 6 40 14 -30 -1.