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VSO025N10MS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，Logic level 5V.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • Pb-free lead plating; RoHS compliant VSO025N10MS 100V/9A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 20 mΩ 22 mΩ ID 9 A SOP8 Part ID VSO025N10MS Package Type SOP8 Marking 025N10M Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drai.

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Datasheet Details

Part number VSO025N10MS
Manufacturer Vanguard Semiconductor
File Size 742.20 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSO025N10MS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N-Channel，Logic level 5V  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO025N10MS 100V/9A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V 20 mΩ 22 mΩ ID 9 A SOP8 Part ID VSO025N10MS Package Type SOP8 Marking 025N10M Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C L=0.