VSP005N06MS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 60V/125A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V ID 60 V 3.8 mΩ 4.9 mΩ 125 A PDFN5x6 Part ID VSP005N06MS Package Type PDFN5x6 Marking 005N06M Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating...