• Part: VSZ090N10MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 412.05 KB
Download VSZ090N10MS Datasheet PDF
VSZ090N10MS page 2
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VSZ090N10MS page 3
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Datasheet Summary

Features - N-Channel,5V Logic Level Control - Enhancement mode - Low on-resistance @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 100V/5A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 100 V 70 mΩ 75 mΩ 5A SOT223 Part ID Package Type SOT223 Marking 090N10M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature...