VSZ260P10MS Description
Features P-Channel，-5V Logic Level Control Very low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching Enhancement mode Pb-free lead plating; VSZ260P10MS -100V/-2.2A P-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=-2A,VGS=0V Tj=25℃,Isd=-2A, VGS=0V di/dt=-100A/μs -- -0.83 -1.2 V -- 15 -- nS 48 nC ① Repetitive rating;.
VSZ260P10MS Key Features
- P-Channel，-5V Logic Level Control
- Very low on-resistance RDS(on) @ VGS=-4.5 V
- Fast Switching
- Enhancement mode
- Pb-free lead plating; RoHS pliant
- 100V/-2.2A P-Channel Advanced Power MOSFET
- 100 V 250 mΩ 260 mΩ -2.2 A
- 55 to 150
- 100V/-2.2A P-Channel Advanced Power MOSFET
- 1.0 -1.8