VSZ160N10MS Description
Features Enhancement mode Fast Switching and High efficiency Pb-free lead plating; VSZ160N10MS 100V/3A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=2A,VGS=0V Tj=25℃,Isd=3A, VGS=0V di/dt=100A/μs ① Repetitive rating;.
VSZ160N10MS Key Features
- Enhancement mode
- Fast Switching and High efficiency
- Pb-free lead plating; RoHS pliant
- JUN, 2020
- JUN, 2020