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GB100DA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
FEATURES
• NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery
SOT-227
• Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC 600 V 100 A at 61 °C 2.
GB100DA60UP Datasheet
