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GB150TS60NPBF - Ultrafast Speed IGBT

Key Features

  • Generation 5 Non Punch Through (NPT) technology.
  • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz.
  • Low VCE(on).
  • 10 μs short circuit capability.
  • Square RBSOA.
  • Positive VCE(on) temperature coefficient INT-A-PAK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient INT-A-PAK • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 PRODUCT SUMMARY VCES IC DC VCE(on) at 150 A, 25 °C 600 V 138 A 2.