Datasheet4U Logo Datasheet4U.com

GB100TS60NPBF - Ultrafast Speed IGBT

Key Features

  • Generation 5 Non Punch Through (NPT) technology.
  • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz.
  • Low VCE(on).
  • 10 μs short circuit capability.
  • Square RBSOA.
  • Positive VCE(on) temperature coefficient INT-A-PAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
GB10HF60KD short-circuit rugged IGBT STMicroelectronics
GB10MPS17-247 Silicon Carbide Schottky Diode GeneSiC
GB10NB37LZ internally clamped IGBT ST Microelectronics
GB10NB60S low drop IGBT STMicroelectronics

Other Datasheets by Vishay

Part Number Description
GB100DA60UP Insulated Gate Bipolar Transistor
GB150TS60NPBF Ultrafast Speed IGBT
GB15XP120KTPBF Three Phase Inverter Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient INT-A-PAK • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 PRODUCT SUMMARY VCES IC DC VCE(on) at 100 A, 25 °C 600 V 108 A 2.