IRFR9110 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRFR9110, Si HFR9110) - Straight lead (IRFU9110, Si HFU9110) - Available in tape and reel - P-channel Available - Fast switching - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HFR9110-GE3 Lead (Pb)-free IRFR9110Pb F Note a. See device orientation DPAK (TO-252) Si HFR9110TRL-GE3 IRFR9110TRLPb F a DPAK (TO-252) Si HFR9110TR-GE3 IRFR9110TRPb F a DPAK (TO-252) IRFR9110TRPb F-BE3 IRFR9110TRRPb F IPAK (TO-251) Si HFU9110-GE3 IRFU9110Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery d V/dt c VGS at -10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C EAS IAR EAR PD d...