SI3861BDV
FEATURES
ID (A)
"2.3 "1.9 "1.7 r DS(on) (W)
0.075 @ VIN = 10 V 0.120 @ VIN = 5.0 V 0.145 @ VIN = 4.5 V
D D D D D D D
4.5-V Rated ESD Protected: 3000 V 105-m W Low r DS(on) Trench FETr 4.5 to 20-V Input 1.5 to 8 -V Logic Level Control Low Profile, Small Footprint TSOP-6 Package 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate
Ro HS
PLIANT
DESCRIPTION
The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel Trench FETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3861DV operates on supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
2, 3 VOUT Q2 6 6 C1 Time ( m S) 6 tr td(on) 2 8 td(off)
Switching Variation R2 @ VIN = 5 V, R1 = 20 k W tf
4 VIN R1
ON/OFF
5 Q1 Co...
