SI3861BDV Description
The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch.
SI3861BDV Applications
- Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73343 S-51015-Rev. A, 23-May-05 .vishay