SI4429EDY Datasheet | Vishay

FEATURES ID (A) - 13.0 - 12.0 - 9.0 D Trench FETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V APPLICATIONS D Battery Switch D Load Switch SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.5 k W ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 10.0 IDM IS - 2.5 3.0 1.9 - 55 to 150 - 50 - 1.3 1.5 0.9 W _C - 7.5 A Symbol VDS VGS 10 secs Steady State - 30 "12 Unit - 13.0 - 9.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70709 S-04712- Rev. A, 24-Sep-01 .vishay. Steady State Steady State Rth JA Rth JF Symbol Typical 32 68 15 Maximum 42 85 18 Unit _C/W Vishay Siliconix New...