The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si4429EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V
FEATURES
ID (A)
–13.0 –12.0 –9.0
D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V
APPLICATIONS
D Battery Switch D Load Switch
D
SO-8
S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.5 kW
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.0 IDM IS –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 0.
SI4429EDY Datasheet
