SI4880DY
SI4880DY is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFETS
- High-Efficiency
- PWM Optimized
- pliant to Ro HS Directive 2002/95/EC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
Ordering Information: Si4880DY-T1-E3 (Lead (Pb)-free) Si4880DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current (10 µs Pulse Width)
TA = 25 °C TA = 70 °C
ID IDM
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
PD TJ, Tstg
Limit 30 ± 25 ± 13 ± 10 ± 50 2.3 2.5 1.6
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Notes: a. Surface mounted on FR4 board. b. t ≤ 10 s. t ≤ 10 s Steady State
Symbol Rth JA
Typical 70
Maximum 50
Unit V
W...
