SI4880DY Description
Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0085 at VGS = 10 V 0.014 at VGS = 4.5 V ID (A) ± 13 ±.
SI4880DY Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETS
- High-Efficiency
- PWM Optimized
- pliant to RoHS Directive 2002/95/EC