Si4888DY Datasheet | Vishay

FEATURES - Halogen-free According to IEC 61249-2-21 Available - Trench FET® Power MOSFET - High-Efficiency PWM Optimized - 100 % Rg Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4888DY-T1-E3 (Lead (Pb)-free) Si4888DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C 16 13 11 8 Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Conduction)a IS 3.0 1.40 Maximum Power Dissipationa TA = 25 °C TA = 70 °C 3.5 2.2 1.6 1.0 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit...