Si4888DY Description
Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 16.
Si4888DY Key Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET® Power MOSFET
- High-Efficiency PWM Optimized
- 100 % Rg Tested