SI4882DY Datasheet | Vishay

New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 r DS(on) (W) 0.0105 @ VGS = 10 V 0.0205 @ VGS = 4.5 V ID (A) "11 "8 SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70 _C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "25 "11 "9 "50 2.3 2.5 1.6 - 55 to 150 Unit W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Foot Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70878 S-00271- Rev. A, 26-Apr-99 .vishay. S Fax Back 408-970-5600 t v 10 sec Steady State Rth JF 19 25 Symbol Rth JA Typical 35 68 Maximum 50 80 Unit _C/W 2-1 Vishay...