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SI4966DY - Dual N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET.

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Datasheet Details

Part number SI4966DY
Manufacturer Vishay
File Size 174.61 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SI4966DY Datasheet

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Full PDF Text Transcription

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Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V ID (A) ± 7.1 ± 6.
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