SI4966DY
SI4966DY is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 20 ± 12
± 7.1 ± 5.7 ± 40 1.7
2 1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol Rth JA
For SPICE model information via the Worldwide Web: .vishay.//product/spice.htm....
