SI4966DY Description
Si4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V ID (A) ± 7.1 ± 6.0.
SI4966DY Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC