SI4967DY
SI4967DY is Dual P-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFETs: 1.8 V Rated
- pliant to Ro HS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free) Si4967DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 G1
D1 P-Channel MOSFET
S2 G2
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 12 ±8
- 7.5
- 6.1
- 30
- 1.7 2.0 1.3
- 55 to 150
Unit...
