SI4967DY Description
Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = - 4.5 V - 12 0.030 at VGS = - 2.5 V 0.045 at VGS = - 1.8 V ID (A) - 7.5 - 6.7.
SI4967DY Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs: 1.8 V Rated
- pliant to RoHS Directive 2002/95/EC