SI6463BDQ Description
P-Channel 1.8 V (G-S) MOSFET Si6463BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V 0.027 at VGS = - 1.8 V ID (A) - 7.4 - 6.3.
SI6463BDQ Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- pliant to RoHS Directive 2002/95/EC
- Source Pins 2, 3, 6 and 7 must be tied mon