SI6463BDQ
SI6463BDQ is P-Channel MOSFET manufactured by Vishay.
P-Channel 1.8 V (G-S) MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.015 at VGS =
- 4.5 V
- 20 0.020 at VGS =
- 2.5 V
0.027 at VGS =
- 1.8 V
ID (A)
- 7.4
- 6.3
- 5.5
Features
- Halogen-free According to IEC 61249-2-21
Definition
- Trench FET® Power MOSFET
- pliant to Ro HS Directive 2002/95/EC
S-
TSSOP-8
D1 S2 S3 G4
8D 7S 6S 5D
Top View
Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
- Source Pins 2, 3, 6 and 7 must be tied mon.
D P-Channel...
