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P-Channel 1.8 V (G-S) MOSFET
Si6463BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V
0.027 at VGS = - 1.8 V
ID (A) - 7.4 - 6.3 - 5.5
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
S*
TSSOP-8
D1 S2 S3 G4
Si6463BDQ
8D 7S 6S 5D
Top View
Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 7.4 - 5.9
- 6.2 - 4.
SI6463BDQ Datasheet
