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SI6467BDQ - P-Channel MOSFET

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Part number SI6467BDQ
Manufacturer Vishay Siliconix
File Size 104.80 KB
Description P-Channel MOSFET
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www.DataSheet.co.kr Si6467BDQ New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V ID (A) -8.0 - 7.0 - 6.0 S* TSSOP-8 D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common. Si6467BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs -12 "8 - 8.0 Steady State Unit V -6.8 -5.4 -30 A -0.95 1.
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