The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet.co.kr
Si6467BDQ
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0125 @ VGS = -4.5 V -12 0.0155 @ VGS = -2.5 V 0.020 @ VGS = -1.8 V
ID (A)
-8.0 - 7.0 - 6.0
S*
TSSOP-8
D S S G 1 2 3 4 Top View D P-Channel MOSFET D 8 D 7 S 6 S 5 D G * Source Pins 2, 3, 6 and 7 must be tied common.
Si6467BDQ
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
-12 "8 - 8.0
Steady State
Unit
V
-6.8 -5.4 -30 A -0.95 1.
SI6467BDQ Datasheet
