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SI6433BDQ - P-Channel 2.5-V (G-S) MOSFET

General Description

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive.

Key Features

  • Unlimited Pages SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET.

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Datasheet Details

Part number SI6433BDQ
Manufacturer Vishay
File Size 221.10 KB
Description P-Channel 2.5-V (G-S) MOSFET
Datasheet download datasheet SI6433BDQ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Click Here & Upgrade PDF Complete Documents Expanded Features Unlimited Pages SPICE Device Model Si6433BDQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.