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N-Channel 30-V (D-S) Rated MOSFET
Si6436DQ
Product Summary
VDS (V) 30
rDS(on) (W) 0.045 @ VGS = 10 V 0.070 @ VGS = 4.5 V
ID (A) "4.4 "3.5
D
TSSOP-8
D1D
S2
Si6436DQ
S3
G4
Top View
8D 7S 6S 5D
*Source Pins 2, 3, 6 and 7
G
must be tied common.
S* N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS PD TJ, Tstg
30 V
"20
"4.4
"3.5 A
"30
1.7
1.5 W
1.
Si6436DQ Datasheet
