Click to expand full text
Si6433DQ
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
0.06 @ VGS = –4.5 V 0.09 @ VGS = –2.5 V
ID (A)
"4.0 "3.0
TSSOP-8
D1D
S2 S3
Si6433DQ
G4
Top View
8D 7S 6S 5D
S*
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS PD TJ, Tstg
–12 "8 "4.0 "3.2 "20 –1.4 1.5 1.
Si6433DQ Datasheet
