The Si6433DQ is a 20V P-Channel PowerTrench MOSFET.
| Package | TSSOP |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | Si6433DQ Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low.
* *4.5 A, *20 V. RDS(ON) = 47 mΩ @ VGS = *4.5 V RDS(ON) = 65 mΩ @ VGS = *2.5 V RDS(ON) = 100 mΩ @ VGS = *1.8 V * RDS(ON) rated for use with 1.8 V logic * Low gate charge (13nC typical) * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package D S S D TSSOP-8 G S . |
| Part Number | SI6433DQ Datasheet |
|---|---|
| Description | P-Channel 2.5-V (G-S) MOSFET |
| Manufacturer | Vishay |
| Overview | Si6433DQ Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) 0.06 @ VGS = –4.5 V 0.09 @ VGS = –2.5 V ID (A) "4.0 "3.0 TSSOP-8 D1D S2 S3 Si6433DQ G4 Top View. , 06-Oct-97 Limit 83 Unit _C/W S FaxBack 408-970-5600 2-1 Si6433DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Verical | 4744 | 235+ : 1.6 USD 500+ : 1.4375 USD 1000+ : 1.325 USD 10000+ : 1.184 USD |
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| Verical | 11967 | 235+ : 1.6 USD 500+ : 1.4375 USD 1000+ : 1.325 USD 10000+ : 1.184 USD |
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| Rochester Electronics | 16711 | 100+ : 1.28 USD 500+ : 1.15 USD 1000+ : 1.06 USD 10000+ : 0.9472 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| SI6433BDQ | Vishay | P-Channel 2.5-V (G-S) MOSFET |