Datasheet4U Logo Datasheet4U.com

Si6433DQ - 20V P-Channel PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Power management L

Key Features

  • 4.5 A,.
  • 20 V. RDS(ON) = 47 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 65 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 100 mΩ @ VGS =.
  • 1.8 V.
  • RDS(ON) rated for use with 1.8 V logic.
  • Low gate charge (13nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • Low profile TSSOP-8 package D S S D TSSOP-8 G S S D Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS Drain.
  • Source Voltag.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
Si6433DQ P-Channel 2.5-V (G-S) MOSFET Vishay
SI6433BDQ P-Channel 2.5-V (G-S) MOSFET Vishay Siliconix
SI6434DQ N-Channel MOSFET Vishay Siliconix
Si6435ADQ P-Channel 30-V (D-S) MOSFET Vishay
Si6436DQ N-Channel 30-V (D-S) Rated MOSFET Vishay

Other Datasheets by Fairchild (now onsemi)

Part Number Description
Si6953DQ Dual 20V P-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si6433DQ July 2001 Si6433DQ 20V P-Channel PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Power management • Load switch Features • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.