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Si6875DQ
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.027 @ VGS = –4.5 V –20 20 0.036 @ VGS = –2.5 V 0.052 @ VGS = –1.8 V
ID (A)
–6.4 –5.5 –4.6
S1
S2
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2
Si6875DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
–20 "8 –6.4 –5.1 –30 –1.6 1.78 1.
SI6875DQ Datasheet
