SI6875DQ Datasheet | Vishay

New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET, mon Drain PRODUCT SUMMARY VDS (V) r DS(on) (W) 0.027 @ VGS = - 4.5 V - 20 20 0.036 @ VGS = - 2.5 V 0.052 @ VGS = - 1.8 V ID (A) - 6.4 - 5.5 - 4.6 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs - 20 "8 - 6.4 - 5.1 - 30 - 1.6 1.78 1.14 Steady State Unit - 5.2 - 4.1 A - 1.08 1.19 0.76 - 55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71230 S-01235- Rev. A, 12-Jun-00 .vishay. S Fax Back 408-970-5600 t v 10 sec Steady State Steady...