SI6880EDQ - N-Channel MOSFET

Features

ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain.

Vishay Siliconix

Datasheet Details

Part number	SI6880EDQ
Manufacturer	Vishay Siliconix
File Size	44.32 KB
Description	N-Channel MOSFET
Datasheet	SI6880EDQ Datasheet
Additional preview pages of the SI6880EDQ datasheet.

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Full PDF Text Transcription

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Si6880EDQ New Product Vishay Siliconix N-Channel 1.8-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.018 @ VGS = 4.5 V 20 0.022 @ VGS = 2.5 V 0.026 @ VGS = 1.8 V FEATURES ID (A) 7.5 6.5 6.0 D TrenchFETr Power MOSFET D ESD Protected: 4000 V D Common Drain APPLICATIONS D 1-2 Cell Battery Protection Circuitry D D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel *Typical value by design N-Channel S2 D 8 D 7 S2 6 S2 5 G2 *1.5 kW G1 G2 *1.

Published: Apr 8, 2005 |