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Si6963BDQ
New Product
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−20
rDS(on) (W)
0.045 @ VGS = −4.5 V 0.080 @ VGS = −2.5 V
ID (A)
−3.9 −3.0
S1
S2
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D1 S1 S1 G1 1 2 3 4 D
TSSOP-8
8 D2 7 S2 6 S2 5 G2 G1 G2
Si6963BDQ
Top View Ordering Information: Si6963BDQ-T1—E3 D1 P-Channel MOSFET D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 sec
−20 "12 −3.9 −3.1 −30 −1.0 1.13 0.
SI6963BDQ Datasheet
