SI6963BDQ Datasheet | Vishay

New Product Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 r DS(on) (W) 0.045 @ VGS = - 4.5 V 0.080 @ VGS = - 2.5 V ID (A) - 3.9 - 3.0 S1 S2 .. D1 S1 S1 G1 1 2 3 4 D TSSOP-8 8 D2 7 S2 6 S2 5 G2 G1 G2 Top View Ordering Information: Si6963BDQ-T1- E3 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 sec - 20 "12 - 3.9 - 3.1 - 30 - 1.0 1.13 0.73 Steady State Unit - 3.4 - 2.7 A - 0.75 0.83 0.53 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. Document Number: 72772 S-40439- Rev. A, 15-Mar-04 .vishay. Steady State Steady State Rth JA Rth...