SI6968BEDQ
SI6968BEDQ is Dual N-Channel 2.5-V MOSFET Common Drain manufactured by Vishay.
FEATURES
PRODUCT SUMMARY
VDS (V)
D Trench FETr Power MOSFET D ESD Protected: 3000 V ID (A)
6.5 5.5 r DS(on) (W)
0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V
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TSSOP-8
D S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6968BEDQ-T1 (with Tape and Reel) N-Channel S1 N-Channel S2 D 8 D 7 S2 6 S2 5 G2
- 300 W G1 G2
- 300 W
- Typical value by design
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
20 "12 6.5
Steady State
Unit
5.2 3.5 30 A 1.0 1.0 0.64
- 55 to 150 W _C
ID IDM IS PD TJ, Tstg
1.5 1.5 0.96
THERMAL RESISTANCE RATINGS
Parameter t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72274 S-31362- Rev. A, 30-Jun-03 .vishay. Steady-State Steady-State Rth JA Rth JF
Symbol
Typ
72 100 55
Max
83 120 70
Unit
_C/W
Vishay...
