SI6968DQ Datasheet | Vishay

Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V ID (A) "6.5 "5.5 .. TSSOP-8 D S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET D 8 D S2 S2 G2 G1 G2 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A, B Pulsed Drain Current Continuous Source Current (Diode Conduction)A, B Dissipation Maximum Power Dissi ation A, B Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT 20 "12 "6.4 "5.1 "30 1.5 1.5 0.96 - 55 to 150 W _C A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Junction to Ambient A t v 10 sec Steady State Notes A. Surface Mounted on FR4 Board. B. t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix Fax Back, 1-408-970-5600. Please request Fax Back document #70757. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S Fax Back (408)970-5600 S .siliconix. S-56943- Rev. E, 02-Nov-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL Rth JA Rth JA 85 TYPICAL MAXIMUM 83 UNIT _C/W 5-1 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Drain Source On Drain-Source On-State State Resistance A Forward Transconductance A Diode Forward Voltage A VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD VDS = VGS, ID = 250 m A VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.5 A VDS = 10 V, ID = 6.5 A IS = 1.5 A, VGS = 0 V 30 0.017 0.022 30 0.66 1.2 0.022 0.030 W S V 0.6 "100 1 5 V n A m A A SYMBOL TEST CONDITION MIN TYP MAX UNIT DYNAMICB .. Total Gate...