Datasheet4U Logo Datasheet4U.com

SI6966EDQ - N-Channel 2.5-V (G-S) MOSFET

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.

55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive.

📥 Download Datasheet

Datasheet preview – SI6966EDQ

Datasheet Details

Part number SI6966EDQ
Manufacturer Vishay Siliconix
File Size 227.90 KB
Description N-Channel 2.5-V (G-S) MOSFET
Datasheet download datasheet SI6966EDQ Datasheet
Additional preview pages of the SI6966EDQ datasheet.

📁 Similar Datasheet

  • Si6953DQ - Dual P-Channel 20-V (D-S) MOSFET (Vishay)
  • Si6953DQ - Dual 20V P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • Si6956DQ - Dual N-Channel 20-V (D-S) MOSFET (Vishay)
  • Si6991DQ - Dual P-Channel MOSFET (Vishay)
  • Si6993DQ - Dual P-Channel MOSFET (Vishay)
  • Si6040 - N-Channel MOSFET (Nanxin)
  • SI60DC100 - DC Solid-State Relay (TELEDYNE)
  • Si6404DQ - N-Channel MOSFET (Vishay)
  • Si6413DQ - P-Channel MOSFET (Vishay)
  • Si6433DQ - P-Channel 2.5-V (G-S) MOSFET (Vishay)
Other Datasheets by Vishay Siliconix

Full PDF Text Transcription

Click to expand full text
SPICE Device Model Si6966EDQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Published: |