SI7460DP
FEATURES
ID (A)
18 16 r DS(on) (W)
0.0096 @ VGS = 10 V 0.012 @ VGS = 4.5 V
D Trench FETr Power MOSFET D New Low Thermal Resistance Power PAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive 12/24-V Battery
- ABS
- ECU
- Motor Drives
Power PAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
S N-Channel MOSFET
Bottom View Ordering Information: Si7460DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
60 "20 18 14 40 4.3 50 125 5.4 3.4
Steady State
Unit
11 8 A 1.6 m J 1.9 1.2 W _C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum...
