SI7461DP
FEATURES
ID (A)
- 14.4
- 12.6 r DS(on) (W)
0.0145 @ VGS =
- 10 V 0.019 @ VGS =
- 4.5 V
D Trench FETr Power MOSFET D New Low Thermal Resistance Power PAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive
- 12-V Boardnet
- High-Side Switches
- Motor Drives
Power PAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm G
4 D 8 7 D 6 D 5 D
D P-Channel MOSFET
Bottom View Ordering Information: Si7461DP-T1- E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0.1 0 1 m H TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
Steady State
- 60 "20
Unit
- 14.4
- 11.5
- 60
- 4.5 50 125 5.4 3.4
- 55 to 150
- 8.6
- 6.9 A
- 1.6 m J 1.9 1.2 W...
