SI9802DY - Dual N-Channel Reduced Qg/ Fast Switching MOSFET

Vishay

Datasheet Details

Part number	SI9802DY
Manufacturer	Vishay
File Size	51.23 KB
Description	Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Datasheet	SI9802DY Datasheet
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Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V ID (A) "4.5 "3.8 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 "4.5 "3.6 "25 "1.7 2 Unit V A W 1.

Published: Apr 8, 2005 |