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Si9803DY
Vishay Siliconix
P-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
–25
rDS(on) (W)
0.040 @ VGS = –4.5 V 0.060 @ VGS = –3.0 V
ID (A)
"5.9 "4.8
S S S
SO-8
S S S G 1 2 3 4 Top View D D D D P-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–25 "12 "5.9 "4.7 "40 –2.1 2.5
Unit
V
A
W 1.6 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a.
SI9803DY Datasheet
