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Si9933BDY
New Product
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−20
rDS(on) (W)
0.06 @ VGS = −4.5 V 0.10 @ VGS = −2.5 V
ID (A)
−4.7 −3.7
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 G1
S1
S2
G2
Ordering Information: Si9933BDY—E3 (Lead Free) Si9933BDY-T1—E3 (Lead Free with Tape and Reel)
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−20 "12
Unit
V
−4.
SI9933BDY Datasheet
