Datasheet4U Logo Datasheet4U.com

SI9934BDY - Dual P-Channel 2.5-V (G-S) MOSFET

Features

  • ID (A).
  • 6.4.
  • 5.1 rDS(on) (W) 0.035 @ VGS =.
  • 4.5 V 0.056 @ VGS =.
  • 2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY.
  • E3 Si9934BDY-T1.
  • E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET.

📥 Download Datasheet

Datasheet preview – SI9934BDY

Datasheet Details

Part number SI9934BDY
Manufacturer Vishay Siliconix
File Size 55.90 KB
Description Dual P-Channel 2.5-V (G-S) MOSFET
Datasheet download datasheet SI9934BDY Datasheet
Additional preview pages of the SI9934BDY datasheet.

📁 Similar Datasheet

  • SI9933DY - Dual P-Channel Enhancement-Mode MOSFET (TEMIC Semiconductors)
  • Si9936DY - Dual N-Channel MOSFET (Fairchild Semiconductor)
  • Si9936DY - Dual N-Channel MOSFET (Vishay)
  • SI9936DY - N-channel enhancement mode field-effect transistor (NXP)
  • Si9939DY - Complimentary MOSFET (Vishay)
  • SI9925 - N-channel enhancement mode field-effect transistor (NXP)
  • SI9925DY - N-channel enhancement mode field-effect transistor (NXP)
  • Si9926 - Dual N-Channel MOSFET (Nanxin)
  • SI9926 - Dual N-Channel MOSFET (KEXIN)
  • Si9926CDY - Dual N-Channel MOSFET (Vishay)
Other Datasheets by Vishay Siliconix
  • SI9933ADY - Dual P-Channel 20-V (D-S) MOSFET
  • SI9933BDY - Dual P-Channel 2.5-V (G-S) MOSFET
  • SI9936BDY - SPICE Device Model Si9936BDY
  • SI9910 - Adaptive Power MOSFET Driver1
  • SI9912 - Half-Bridge MOSFET Driver for Switching Power Supplies
  • SI9913 - Dual MOSFET Bootstrapped Driver with Break-Before-Make
  • SI9925DY - Dual N-Channel MOSFET
  • SI9926ADY - Dual N-Channel 2.5-V (G-S) MOSFET

Full PDF Text Transcription

Click to expand full text
Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES ID (A) −6.4 −5.1 rDS(on) (W) 0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −12 "8 Unit V −6.
Published: |