Datasheet4U Logo Datasheet4U.com

SI9934BDY - Dual P-Channel 2.5-V (G-S) MOSFET

Key Features

  • ID (A).
  • 6.4.
  • 5.1 rDS(on) (W) 0.035 @ VGS =.
  • 4.5 V 0.056 @ VGS =.
  • 2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY.
  • E3 Si9934BDY-T1.
  • E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number SI9934BDY
Manufacturer Vishay
File Size 55.90 KB
Description Dual P-Channel 2.5-V (G-S) MOSFET
Datasheet download datasheet SI9934BDY Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI9933DY Dual P-Channel Enhancement-Mode MOSFET TEMIC Semiconductors
Si9936DY Dual N-Channel MOSFET Fairchild Semiconductor
Si9936DY Dual N-Channel MOSFET Vishay
SI9936DY N-channel enhancement mode field-effect transistor NXP
Si9939DY Complimentary MOSFET Vishay

Other Datasheets by Vishay

Part Number Description
SI9933ADY Dual P-Channel 20-V (D-S) MOSFET
SI9933BDY Dual P-Channel 2.5-V (G-S) MOSFET
SI9936BDY SPICE Device Model Si9936BDY
SI9910 Adaptive Power MOSFET Driver1
SI9912 Half-Bridge MOSFET Driver for Switching Power Supplies

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES ID (A) −6.4 −5.1 rDS(on) (W) 0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V D TrenchFETr Power MOSFET S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −12 "8 Unit V −6.