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SIA429DJT - P-Channel 20V (D-S) MOSFET

Datasheet Summary

Features

  • TrenchFET® power MOSFET.
  • New thermally enhanced PowerPAK® SC-70 package - Small footprint area - Ultra-thin 0.6 mm height - Low on-resistance.
  • 100 % Rg tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIA429DJT
Manufacturer Vishay Siliconix
File Size 314.97 KB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet SIA429DJT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET Thin PowerPAK® SC-70-6L Single D D6 S5 4 2.05 mm 0.6 mm 1 2.05 mm Top View Marking code: BP S 1 7 2D 3D G Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a Configuration -20 0.0205 0.0270 0.0360 0.0600 24.5 -12 Single FEATURES • TrenchFET® power MOSFET • New thermally enhanced PowerPAK® SC-70 package - Small footprint area - Ultra-thin 0.6 mm height - Low on-resistance • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.
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