SIA429DJT Description
BP S 1 7 2D 3D G Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max.
SIA429DJT Key Features
- TrenchFET® power MOSFET
- New thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Ultra-thin 0.6 mm height
- Low on-resistance
- 100 % Rg tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
SIA429DJT Applications
- Load switch and charger switch for portable devices