SiA425EDJ Description
SiA425EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = - 4.5 V - 20 0.065 at VGS = - 3.6 V 0.080 at VGS = - 2.5 V 0.120 at VGS = - 1.8 V ID (A) - 4.5a - 4.5a - 4.5a -2 4.9 nC Qg.
SiA425EDJ Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- New Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Typical ESD Protection 2400 V
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
SiA425EDJ Applications
- Load Switch and Battery Switch for Portable Devices