SIHFS11N50A - Power MOSFET

Vishay

Key Features

Low Gate Charge Qg results in Simple Drive Requirement.
Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness.
Fully Characterized Capacitance and Avalanche Voltage and Current Available.
Effective Coss Specified.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 Note.
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For.

SIHFS11N50A power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SIHFS11N50A
Manufacturer	Vishay
File Size	344.02 KB
Description	Power MOSFET
Datasheet	SIHFS11N50A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 D2PAK (TO-263) D G FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Available • Effective Coss Specified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.