SIHLU014 Datasheet | Vishay

FEATURES - Dynamic d V/dt Rating - Surface Mount (IRLR014, Si HLR014) - Straight Lead (IRLU014, Si HLU014) - Available in Tape and Reel - Logic-Level Gate Drive - RDS(on) Specified at VGS = 4 V and 5 V - Fast Switching - Material categorization: For definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, Si HLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. DPAK (TO-252) Si HLR014-GE3 IRLR014Pb F Si HLR014-E3 DPAK (TO-252) IRLR014TRPb Fa Si HLR014T-E3a DPAK (TO-252) Si HLR014TRL-GE3 IRLR014TRLPb Fa Si HLR014TL-E3a IPAK (TO-251) Si HLU014-GE3 IRLU014Pb F Si HLU014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.0 V TC = 25 °C TC = 100 °C Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery d V/dtc TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s VDS VGS ID IDM EAS PD d V/dt TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD  10 A, d I/dt  90 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 60 ± 10 7.7 4.9 31 0.20 0.020...