SIHLU120 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRLR120, Si HLR120) - Straight lead (IRLU120, Si HLU120) - Available in tape and re Mel - Logic-level gate drive Available - RDS(on) specified at VGS = 4 V and 5 V - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, Si HLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HLR120-GE3 IRLR120Pb F-BE3 Lead (Pb)-free IRLR120Pb F Note a. See device orientation DPAK (TO-252) Si HLR120TRL-GE3 IRLR120TRLPb F-BE3 IRLR120TRLPb F a DPAK (TO-252) Si HLR120TR-GE3 IRLR120TRPb F-BE3 IRLR120TRPb F a DPAK (TO-252) Si HLR120TRR-GE3 IRLR120TRRPb F a IPAK (TO-251) Si HLU120-GE3 - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS at 5 V TC = 25 °C TC = 100 °C Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery d V/dt c TC = 25 °C TA = 25...