SS12P4C - High Current Density Surface Mount Schottky Barrier Rectifier

Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency.
Low thermal impedance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay Siliconix

Datasheet Details

Part number	SS12P4C
Manufacturer	Vishay Siliconix
File Size	100.08 KB
Description	High Current Density Surface Mount Schottky Barrier Rectifier
Datasheet	SS12P4C Datasheet
Additional preview pages of the SS12P4C datasheet.

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Full PDF Text Transcription

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www.vishay.com SS12P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal impedance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 6.0 A TJ max. Package 2 x 6.0 A 40 V 150 A 20 mJ 0.

Published: Jan 28, 2012 |