SS12P4S
SS12P4S is SMD Photovoltaic Solar Cell Protection Schottky Rectifier manufactured by Vishay.
.Data Sheet.co.kr
New Product
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
Features e SMP Series
®
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Guardring for overvoltage protection
- Low forward voltage drop, low power losses
1 2
- High efficiency
- Low thermal resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 12 A TJ max. 12 A 40 V 280 A 20 m J 0.43 V 150 °C
Case: TO-277A (SMPC) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3
- halogen-free, Ro HS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t 1 h (3) VRRM IF IFSM EAS TOP, TSTG TJ SYMBOL SS12P4S 124S 40 12 (1) 4.4 (2) 280 20
- 55 to + 150 200 V A A m J °C °C UNIT
Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on remended copper pad area (3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
Document Number: 89127 Revision:...
