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SUP60N10-16L - N-Channel MOSFET

Key Features

  • rDS(on) (W) ID (A) 60 56 0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized.

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SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 60 56 0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch TO-220AB D G DRAIN connected to TAB G D S Top View SUP60N10-16L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.