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New Product
N-Channel 30-V MOSFET
Si4856DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.006 @ VGS = 10 V 0.0085 @ VGS = 4.5 V
ID (A)
17 14
FEATURES
D TrenchFETr Power MOSFETS D 100% RG Tested
APPLICATIONS
D Buck Converter D Synchronous Rectifier
- Secondary Rectifier
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
30 "20 17 12 14 9 "50 2.7 1.40 3.0 1.6 2.0 1.
Si4856DY Datasheet
