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Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 10 V 60
0.031 at VGS = 4.5 V
ID (A) 8.5 7.2
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
8.5
6.0
7.1
5.
Si4850EY Datasheet
