Si4850EY Description
Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 60 0.031 at VGS = 4.5 V ID (A) 8.5 7.2.
Si4850EY Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFETs
- 175 °C Maximum Junction Temperature
- pliant to RoHS Directive 2002/95/EC