SiHFBC20S Datasheet | Vishay

FEATURES 600 4.4 - - - - - - - - Surface Mount (IRFBC20S/Si HFBC20S) Low-Profile Through-Hole (IRFBC20L/Si HFBC20L) Available in Tape and Reel (IRFBC20S/Si HFBC20S) Dynamic d V/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available Ro HS- PLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L/Si HFBC20L) is a available for low-profile applications. I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb Note a. See device orientation. D2PAK (TO-263) IRFBC20SPb F Si HFBC20S-E3 IRFBC20S Si HFBC20S D2PAK (TO-263) IRFBC20STRLPb Fa Si HFBC20STL-E3a IRFBC20STRLa Si HFBC20STLa I2PAK (TO-262) IRFBC20LPb F Si HFBC20L-E3 IRFBC20L Si HFBC20L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e TA = 25 °C TC = 25 °C Currenta, e VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt LIMIT 600 ± 20 2.2 1.4 8.0 0.40 84 2.2 5.0 3.1 50 3.0 - 55 to + 150 300d UNIT V A W/°C m J A m J W V/ns °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum...