SiHFBC30A Datasheet | Vishay

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- Ruggedness PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Effective Coss Specified - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptable Power Supply - High Speed Power Switching TYPICAL SMPS TOPOLOGY - Single Transistor Flyback TO-220AB IRFBC30APb F Si HFBC30A-E3 IRFBC30A Si HFBC30A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 41 m H, Rg = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, d I/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 600 ± 30 3.6 2.3 14 0.69 290 3.6 7.4 74 7.0 - 55 to + 150 300d 10 1.1 UNIT...