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SiHFBC30A - Power MOSFET

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.
  • Ruggedness.

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Full PDF Text Transcription for SiHFBC30A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFBC30A. For precise diagrams, and layout, please refer to the original PDF.

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5....

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Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5.